Colloidal quantum dot photovoltaics: a path forward. Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition. Oh S J, Berry N E, Choi J H, Gaulding E A, Lin H et al. 50-Fold EQE Improvement up to 6.27% of solution-processed all-inorganic perovskite CsPbBr 3 QLEDs via surface ligand density control. Li J H, Xu L M, Wang T, Song J Z, Chen J W et al. Highly efficient perovskite-quantum-dot light-emitting diodes by surface engineering. Pan J, Quan L N, Zhao Y B, Peng W, Murali B et al. Solution-processed, high-performance light-emitting diodes based on quantum dots. Significant improvement in the performance of PbSe quantum dot solar cell by introducing a CsPbBr 3 perovskite colloidal nanocrystal back layer. Zhang Z L, Chen Z H, Zhang J B, Chen W J, Yang J F et al. Hybrid organic-inorganic inks flatten the energy landscape in colloidal quantum dot solids. Liu M X, Voznyy O, Sabatini R, De Arquer F P G, Munir R et al. Colloidal quantum dot solids for solution-processed solar cells. An enhanced UV-Vis-NIR an d flexible photodetector based on electrospun ZnO nanowire array/PbS quantum dots film heterostructure. Zheng Z, Gan L, Zhang J B, Zhuge F W, Zhai T Y. Lead sulphide nanocrystal photodetector technologies. Infrared photodetection based on colloidal quantum-dot films with high mobility and optical absorption up to THz. Lhuillier E, Scarafagio M, Hease P, Nadal B, Aubin H et al. Engineering charge transport by heterostructuring solution-processed semiconductors. Voznyy O, Sutherland B R, Ip A H, Zhitomirsky D, Sargent E H. Designed assembly and integration of colloidal nanocrystals for device applications. Building devices from colloidal quantum dots. Kagan C R, Lifshitz E, Sargent E H, Talapin D V. Finally, the challenges of ALD applications in QDs at present and several prospects including ALD process optimization, in-situ characterization and computational simulations are proposed. Attributed to the ultra-thin and dense coating on the interface, the improvement on optoelectronic performance is achieved. Furthermore, the carrier transport is ameliorated efficiently by infilling interstitial spaces during ALD process. The QDs stability and devices lifetime are improved greatly through the introduction of ALD barrier layers. ALD proves to be successful in the photoluminance quantum yield (PLQY) enhancement due to the elimination of QDs surface dangling bonds and defects. In this perspective, the attempts to utilize ALD techniques in QDs modification to improve the photoluminance efficiency, stability, carrier mobility, as well as interfacial carrier utilization are introduced. As a gas-phase surface treatment method, atomic layer deposition (ALD) has shown the potential in QDs surface modification and device construction owing to the atomic-level control and excellent uniformity/conformality. Nevertheless, the limited optoelectronic performance and poor lifetime of QDs devices hinder their further applications. Quantum dots (QDs) are promising candidates for the next-generation optical and electronic devices due to the outstanding photoluminance efficiency, tunable bandgap and facile solution synthesis.
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